| PART |
Description |
Maker |
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| 310-024105-021 024105-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025107-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025107-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025109-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 2SC5433 2SC5433-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| MRF917T1 |
LOW NOISE HIGH FREQUENCY TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| 2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER
|
Unisonic Technologies
|
| 2SC5379 |
SILICON NPN EPITAXIAL PLANER TYPE(FOR LOW-VOLTAGE LOW-NOISE HIGH-FREQUENCY OSCILLATION)
|
Panasonic Corporation
Panasonic Semiconductor
|
